RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
TwinMOS 8DPT5MK8-TATP 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Compare
TwinMOS 8DPT5MK8-TATP 2GB vs Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Overall score
TwinMOS 8DPT5MK8-TATP 2GB
Overall score
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
TwinMOS 8DPT5MK8-TATP 2GB
Report a bug
Below the latency in the PassMark tests, ns
53
74
Around 28% lower latency
Faster reading speed, GB/s
3
13.6
Average value in the tests
Reasons to consider
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Report a bug
Faster write speed, GB/s
7.7
1,590.1
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
TwinMOS 8DPT5MK8-TATP 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
53
74
Read speed, GB/s
3,726.4
13.6
Write speed, GB/s
1,590.1
7.7
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
522
1616
TwinMOS 8DPT5MK8-TATP 2GB RAM comparisons
Swissbit SEU25664D6BC2EP-30 2GB
Micron Technology 9HTF12872JY80EE1D4 1GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB5285282666 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-2400C15-8GRB 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD44G240041 4GB
Samsung M378B5773DH0-CH9 2GB
Kingston 8ATF1G64AZ-2G1B1 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Corsair CMU32GX4M4C3000C15 8GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Kingston KHX426C13/8G 8GB
Smart Modular SF564128CJ8N6NNSEG 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
G Skill Intl F4-4000C14-16GTZR 16GB
Crucial Technology BLS4G4D26BFSE.8FD2 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK128GX4M4A2400C16 32GB
Kingston 99U5474-022.A00LF 2GB
Samsung M393A2G40EB1-CRC 16GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
A-DATA Technology DDR4 2666 8GB
Avant Technology W641GU42J7240NC 8GB
Kingston 9905403-174.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FAD1 4GB
Report a bug
×
Bug description
Source link