RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
17.5
Average value in the tests
Reasons to consider
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
96
Around -243% lower latency
Faster write speed, GB/s
13.3
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
28
Read speed, GB/s
2,725.2
17.5
Write speed, GB/s
1,336.0
13.3
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
438
3317
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT32G4DFD832A.M16FB 32GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-2666C18-4GRS 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-2666C19-8GIS 8GB
Samsung M471B1G73QH0-YK0 8GB
Samsung M378A2G43MX3-CTD 16GB
Kingston KHX1600C9D3/8G 8GB
Mushkin MR[A/B]4U300JJJM8G 8GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT16G4SFD8266.M16FH 16GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT16G4DFS8266.C8FE 16GB
Kingston KVR16N11/8-SP 8GB
V-Color Technology Inc. TL8G36818C-I2PSAAS 8GB
Kingston KP223C-ELD 2GB
Micron Technology 4ATF51264AZ-3G2J1 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Crucial Technology BLM8G40C18U4B.M8FE1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3200C14-8GTRG 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-4000C14-8GTZR 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Report a bug
×
Bug description
Source link