RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
96
Around -35% lower latency
Faster write speed, GB/s
6.4
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
71
Read speed, GB/s
2,725.2
15.6
Write speed, GB/s
1,336.0
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
438
1650
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Ramos Technology EWB8GB681CA3-16IC 8GB
V-Color Technology Inc. TL48G30S8KSRGB15 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
SanMax Technologies Inc. SMD4-U8G46ME-32AA 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4SFD8213.M16FA 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
Micron Technology 16ATF2G64AZ-2G3A1 16GB
Corsair CMV4GX3M1B1600C11 4GB
A-DATA Technology DDR4 2133 2OZ 8GB
Hexon Technology Pte Ltd HEXON 1GB
A-DATA Technology AO1E34RCTV2-BZWS 32GB
G Skill Intl F5-6400J3239G16G 16GB
Samsung M471A1G44BB0-CWE 8GB
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4SFD8213.C16FBD2 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Good Wealth Technology Ltd. KETECH 8GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3333C16-8GVR 8GB
SK Hynix HMT325S6CFR8C-PB 2GB
Micron Technology 4ATF51264HZ-2G3B2 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Micron Technology 16ATF2G64HZ-2G6E3 16GB
Kingston 9905428-123.A00LF 8GB
Crucial Technology CT32G4SFD8266.C16FE 32GB
AMD R5S38G1601U2S 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Report a bug
×
Bug description
Source link