RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Faster reading speed, GB/s
2
15.6
Average value in the tests
Reasons to consider
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Report a bug
Below the latency in the PassMark tests, ns
71
96
Around -35% lower latency
Faster write speed, GB/s
6.4
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
71
Read speed, GB/s
2,725.2
15.6
Write speed, GB/s
1,336.0
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
438
1650
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shenshan (Shenzhen) Electronic KZ26UE5116TZR8 8GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT8G4DFD8213.C16FHP 8GB
Nanya Technology NT8GC64B8HB0NS-DI 8GB
Kingston KHX2133C14/8G 8GB
Samsung M3 78T3354BZ0-CCC 256MB
Kingston KHX2666C13/8GX 8GB
Apacer Technology 78.01G86.9H50C 1GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
Kingston ACR512X64D3S13C9G 4GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Kingston 99U5595-005.A00LF 2GB
Kingston 9905678-005.A00G 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Crucial Technology CT8G4SFS632A 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M393A1K43BB1-CTD 8GB
G Skill Intl F5-6400J3239G16G 16GB
Hynix Semiconductor (Hyundai Electronics) HMA84GL7MMR4N
SK Hynix HYMP112S64CP6-S6 1GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
SK Hynix HMA41GU6MFR8N-TF 8GB
Samsung M395T2863QZ4-CF76 1GB
Asgard VMA45UG-MEC1U2AW1 8GB
Kingston 9965433-034.A00LF 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
Report a bug
×
Bug description
Source link