A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

A-DATA Technology AD73I1B1672EG 2GB vs Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

Overall score
star star star star star
A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB

Differences

  • Below the latency in the PassMark tests, ns
    26 left arrow 31
    Around 16% lower latency
  • Faster reading speed, GB/s
    12.2 left arrow 12
    Average value in the tests
  • Faster write speed, GB/s
    8.6 left arrow 8.5
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology AD73I1B1672EG 2GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6EFR8C-PB 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 31
  • Read speed, GB/s
    12.2 left arrow 12.0
  • Write speed, GB/s
    8.5 left arrow 8.6
  • Memory bandwidth, mbps
    10600 left arrow 12800
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    1677 left arrow 2066
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

Latest comparisons