RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Compare
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Overall score
A-DATA Technology AM2U16BC4P2-B05B 4GB
Overall score
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology AM2U16BC4P2-B05B 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
66
Around 61% lower latency
Faster write speed, GB/s
9.1
7.9
Average value in the tests
Reasons to consider
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Report a bug
Faster reading speed, GB/s
15.9
14
Average value in the tests
Higher memory bandwidth, mbps
19200
12800
Around 1.5 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
66
Read speed, GB/s
14.0
15.9
Write speed, GB/s
9.1
7.9
Memory bandwidth, mbps
12800
19200
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2330
1877
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM comparisons
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Avexir Technologies Corporation DDR4-2400 8GB CL16 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology CT51264AC800.C16FC 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Kingston 99U5471-020.A00LF 4GB
Kingston 9905630-025.A00G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gloway International Co. Ltd. TYA4U3000E16081C 8GB
Samsung DDR3 8GB 1600MHz 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
Kingston 9905403-156.A00LF 2GB
Crucial Technology BL32G32C16U4W.M16FB1 32GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2133C15-8GNT 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Team Group Inc. DDR4 2666 8GB
Corsair CML8GX3M2A1600C9 4GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
G Skill Intl F4-4000C16-8GVK 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston 9932291-002.A00G 4GB
Samsung M471B5273EB0-CK0 4GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston HP24D4U7S8MBP-4 4GB
Report a bug
×
Bug description
Source link