RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Compare
A-DATA Technology AM2U16BC4P2-B05B 4GB vs Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Overall score
A-DATA Technology AM2U16BC4P2-B05B 4GB
Overall score
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology AM2U16BC4P2-B05B 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
59
Around 56% lower latency
Reasons to consider
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Report a bug
Faster reading speed, GB/s
17.2
14
Average value in the tests
Faster write speed, GB/s
9.7
9.1
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology AM2U16BC4P2-B05B 4GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
59
Read speed, GB/s
14.0
17.2
Write speed, GB/s
9.1
9.7
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2330
2181
A-DATA Technology AM2U16BC4P2-B05B 4GB RAM comparisons
Kingston EBJ81UG8BBW0-GN-F 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Shenzhen Jinge Information Co. Ltd. BRBP1G48G16C2400 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung DDR3 8GB 1600MHz 8GB
Kllisre 0000 8GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Samsung M386A8K40CM2-CRC 64GB
Kingston 99U5584-001.A00LF 4GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston HP37D4U1S8ME-16XR 16GB
Kingston 9905316-106.A02LF 1GB
Kingston HP37D4U1S8ME-8XR 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Patriot Memory (PDP Systems) PSD416G21332S 16GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology BLS4G4D240FSA.M8FADM 4GB
Kingston 9905469-143.A00LF 4GB
G Skill Intl F4-3200C16-32GTZN 32GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston KHX4133C19D4/8GX 8GB
PUSKILL DDR3 1600 8G 8GB
Kingston 9905625-029.A00G 8GB
Kingston 99P5474-014.A00LF 4GB
Kingston 9905624-023.A00G 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK64GX4M4D3000C16 16GB
Hexon Technology Pte Ltd HEXON 1GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-4000C19-16GTRS 16GB
Report a bug
×
Bug description
Source link