RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR2 800G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Compare
A-DATA Technology DDR2 800G 2GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Overall score
A-DATA Technology DDR2 800G 2GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DDR2 800G 2GB
Report a bug
Below the latency in the PassMark tests, ns
49
56
Around 13% lower latency
Faster reading speed, GB/s
5
20.1
Average value in the tests
Faster write speed, GB/s
2,343.1
10.5
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Report a bug
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DDR2 800G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
56
Read speed, GB/s
5,135.8
20.1
Write speed, GB/s
2,343.1
10.5
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
843
2455
A-DATA Technology DDR2 800G 2GB RAM comparisons
Corsair CMK16GX4M2B3200C16 8GB
G Skill Intl F4-4266C19-32GTZR 32GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DDR2 800G 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Samsung M3 78T5663RZ3-CF7 2GB
Transcend Information TS2GLH64V4B 16GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Kingston KHX2800C14D4/4GX 4GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
A-DATA Technology AO1P32MCST2-BW4S 16GB
Kingston 9905403-061.A00LF 2GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston XJ69DF-HYA 8GB
Kingston KVR16N11/8-SP 8GB
Crucial Technology CT16G4DFD8266.M16FJ 16GB
Samsung M471B5673FH0-CF8 2GB
G Skill Intl F4-2400C17-16GSXF 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS8G4D240FSEK.8FD 8GB
Samsung M471B5273DH0-CH9 4GB
Avant Technology W641GU48J5213ND 8GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Kingston 99U5584-005.A00LF 4GB
SK Hynix HMA851U6DJR6N-WM 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Corsair CM4X8GD3000C16K4D 8GB
Kingston 99U5428-063.A00LF 8GB
Micron Technology ILG8GS2400A 8GB
Report a bug
×
Bug description
Source link