RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DDR4 2666 8GB
Samsung M386A2G40DB0-CPB 16GB
Compare
A-DATA Technology DDR4 2666 8GB vs Samsung M386A2G40DB0-CPB 16GB
Overall score
A-DATA Technology DDR4 2666 8GB
Overall score
Samsung M386A2G40DB0-CPB 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DDR4 2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
32
45
Around 29% lower latency
Faster reading speed, GB/s
15.5
10
Average value in the tests
Faster write speed, GB/s
11.8
8.1
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25% higher bandwidth
Reasons to consider
Samsung M386A2G40DB0-CPB 16GB
Report a bug
Specifications
Complete list of technical specifications
A-DATA Technology DDR4 2666 8GB
Samsung M386A2G40DB0-CPB 16GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
32
45
Read speed, GB/s
15.5
10.0
Write speed, GB/s
11.8
8.1
Memory bandwidth, mbps
21300
17000
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2968
2414
A-DATA Technology DDR4 2666 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M386A2G40DB0-CPB 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378A1G43EB1-CPB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLS8G4D26BFSTK.8FD 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
A-DATA Technology DDR4 2666 8GB
Samsung M386A2G40DB0-CPB 16GB
AMD R5S38G1601U2S 8GB
G Skill Intl F4-3600C16-32GVK 32GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMW128GX4M8C3200C16 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SF4641G8CK8I8GKSBG 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Gloway International (HK) STKD4GAM2400-F 8GB
Samsung M393B2G70BH0-YK0 16GB
Crucial Technology CT8G4SFD824A.C16FBD1 8GB
takeMS International AG TMS2GB264D082-805G 2GB
AMD R744G2400U1S 4GB
Samsung M471B5173QH0-YK0 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
Samsung M3 78T2863QZS-CF7 1GB
Crucial Technology CT4G4DFS824A.C8FHP 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT8G4DFRA266.C8FN 8GB
Micron Technology 4ATF51264HZ-2G3E1 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
A-DATA Technology DDR4 3600 8GB
Report a bug
×
Bug description
Source link