RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology AFSD416ES1P 16GB
Compare
A-DATA Technology DOVF1B163G2G 2GB vs Micron Technology AFSD416ES1P 16GB
Overall score
A-DATA Technology DOVF1B163G2G 2GB
Overall score
Micron Technology AFSD416ES1P 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DOVF1B163G2G 2GB
Report a bug
Faster reading speed, GB/s
4
14.5
Average value in the tests
Reasons to consider
Micron Technology AFSD416ES1P 16GB
Report a bug
Below the latency in the PassMark tests, ns
25
56
Around -124% lower latency
Faster write speed, GB/s
10.7
1,925.7
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DOVF1B163G2G 2GB
Micron Technology AFSD416ES1P 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
56
25
Read speed, GB/s
4,315.2
14.5
Write speed, GB/s
1,925.7
10.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
658
2620
A-DATA Technology DOVF1B163G2G 2GB RAM comparisons
ProMos/Mosel Vitelic V916764K24QAFW-F5 512MB
Kingston DNU540DR4NABND1 2GB
Micron Technology AFSD416ES1P 16GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Hexon Technology Pte Ltd HEXON 1GB
V-GEN D4S4GL32A16TS 4GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology 9ASF1G72AZ-2G3B1 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFRA32A.M16FR 16GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3200C16-8GTZSK 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMT128GX4M8C3000C15 16GB
Kingston KHX318C10FR/8G 8GB
Avexir Technologies Corporation DDR4-2666 CL17 8GB 8GB
PUSKILL DDR3 1600 8G 8GB
Kllisre 0000 8GB
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BL16G32C16U4BL.16FE 16GB
Kingston 9905403-444.A00LF 4GB
Corsair CMW64GX4M8Z2933C16 8GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-3000C14-8GTZ 8GB
Kingston 9905403-061.A00LF 2GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology BLT2G3D1608DT1TX0 2GB
Kingston KHX4800C19D4/8GX 8GB
Report a bug
×
Bug description
Source link