RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Compare
A-DATA Technology DQKD1A08 1GB vs G Skill Intl F4-3600C17-16GTZSW 16GB
Overall score
A-DATA Technology DQKD1A08 1GB
Overall score
G Skill Intl F4-3600C17-16GTZSW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQKD1A08 1GB
Report a bug
Faster reading speed, GB/s
2
18.3
Average value in the tests
Reasons to consider
G Skill Intl F4-3600C17-16GTZSW 16GB
Report a bug
Below the latency in the PassMark tests, ns
27
52
Around -93% lower latency
Faster write speed, GB/s
17.7
1,145.9
Average value in the tests
Higher memory bandwidth, mbps
17000
4200
Around 4.05 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQKD1A08 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
52
27
Read speed, GB/s
2,614.5
18.3
Write speed, GB/s
1,145.9
17.7
Memory bandwidth, mbps
4200
17000
Other
Description
PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
4-4-4-12 / 533 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
409
3956
A-DATA Technology DQKD1A08 1GB RAM comparisons
SK Hynix HYMP125U64CP8-S6 2GB
Samsung M4 70T2864AZ3-CE6 1GB
G Skill Intl F4-3600C17-16GTZSW 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M378B5773DH0-CH9 2GB
GIGA - BYTE Technology Co Ltd AR36C18S8K2HU416R 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
G Skill Intl F4-3200C16-16GTRS 16GB
Peak Electronics 256X64M-67E 2GB
Samsung V-GeN D4S4GL30A16TS5 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Crucial Technology CT8G4DFS824A.C8FBR1 8GB
Hexon Technology Pte Ltd HEXON 1GB
Micron Technology 8ATF1G64HZ-2G6J1 8GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
G Skill Intl F4-4133C19-8GTZR 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Crucial Technology BLS4G4D240FSB.8FBD2 4GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK64GX4M2A2666C16 32GB
G Skill Intl F3-1600C11-4GIS 4GB
G Skill Intl F4-3200C16-16GTZKY 16GB
SK Hynix HMT351R7EFR8C-RD 4GB
Transcend Information TS1GSH64V4B 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Avant Technology J642GU42J7240N2 16GB
Kingston 9965525-058.A00LF 8GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
SK Hynix HMT425S6CFR6A-PB 2GB
A-DATA Technology AO1P24HC4R1-BSIS 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Kingston 9905678-006.A00G 4GB
‹
›
Report a bug
×
Bug description
Source link