RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
AMD R744G2606U1S 4GB
Compare
A-DATA Technology DQVE1908 512MB vs AMD R744G2606U1S 4GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
AMD R744G2606U1S 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Below the latency in the PassMark tests, ns
66
76
Around 13% lower latency
Faster reading speed, GB/s
2
15.7
Average value in the tests
Reasons to consider
AMD R744G2606U1S 4GB
Report a bug
Faster write speed, GB/s
8.7
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
AMD R744G2606U1S 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
76
Read speed, GB/s
2,775.5
15.7
Write speed, GB/s
1,557.9
8.7
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
1809
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
AMD R744G2606U1S 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Micron Technology 4ATF1G64HZ-3G2E1 8GB
Micron Technology 8ATF1G64HZ-3G2J1 8GB
G Skill Intl F3-12800CL7-4GBXM 4GB
Crucial Technology BLS16G4D26BFSE.16FE 16GB
PNY Electronics PNY 2GB
Samsung M393A2K40BB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Samsung 1600 CL10 Series 8GB
Kingston HP24D4S7S8MBP-8 8GB
Kingston KHX3200C18D4/8G 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Kingston 99U5428-040.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
A-DATA Technology DDR2 800G 2GB
Kingston X74R9W-MIE 8GB
AMD R538G1601U2S 8GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Samsung M471B5273CH0-CH9 4GB
Crucial Technology BLS4G4D240FSA.M8FADG 4GB
SpecTek Incorporated ?????????????????? 2GB
SK Hynix HMAA1GU6CJR6N-XN 8GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT16G4DFD824A.C16FBR 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Wilk Elektronik S.A. GR3200S464L22/16G 16GB
Report a bug
×
Bug description
Source link