RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GTZ 16GB
Compare
A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3000C14-16GTZ 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
G Skill Intl F4-3000C14-16GTZ 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
17.5
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C14-16GTZ 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
66
Around -113% lower latency
Faster write speed, GB/s
13.6
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GTZ 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
31
Read speed, GB/s
2,775.5
17.5
Write speed, GB/s
1,557.9
13.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3371
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
G Skill Intl F4-3000C14-16GTZ 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 78T3354BZ0-CCC 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GTZ 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology BL16G36C16U4WL.M16FE 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Panram International Corporation PUD42133C138G4NJK 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Gloway International (HK) STK4U2133D15081C 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
G Skill Intl F4-4000C16-16GVKA 16GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMD16GX4M4B3000C15 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CMK64GX4M4C3000C15 16GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT8G4DFD824A.C16FDD2 8GB
Kingston 9905403-500.A01LF 8GB
SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Apacer Technology D22.2221ZA.001 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CMD16GX4M2B3600C18 8GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
G Skill Intl F4-3600C19-8GVRB 8GB
Elpida EBE21UE8ACUA-8G-E 2GB
Mushkin MR[A/B]4U320LLLM8G 8GB
Report a bug
×
Bug description
Source link