RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GVK 16GB
Compare
A-DATA Technology DQVE1908 512MB vs G Skill Intl F4-3000C14-16GVK 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
G Skill Intl F4-3000C14-16GVK 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
17
Average value in the tests
Reasons to consider
G Skill Intl F4-3000C14-16GVK 16GB
Report a bug
Below the latency in the PassMark tests, ns
30
66
Around -120% lower latency
Faster write speed, GB/s
13.3
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GVK 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
30
Read speed, GB/s
2,775.5
17.0
Write speed, GB/s
1,557.9
13.3
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
382
3428
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
G Skill Intl F4-3000C14-16GVK 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B2G70BH0-CK0 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3000C14-16GVK 16GB
Kingston 99U5474-010.A00LF 2GB
Kingston 9965640-035.C00G 32GB
Kingston 9965525-144.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6CJR8N
Kingston ACR256X64D3S1333C9 2GB
Samsung 18ASF1G72PDZ-2G1B1 16GB
Kingston KHX3200C18D4/8G 8GB
Chun Well Technology Holding Limited CL16-18-18 D4-2666
Crucial Technology CT102464BF160B.16F 8GB
Kingston KHX2666C15D4/8G 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Kingston 99U5474-010.A00LF 2GB
Patriot Memory (PDP Systems) 3000 C15 Series 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston 9905700-053.A00G 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMSX64GX4M4A2400C16 16GB
SK Hynix HMT31GR7CFR4C-PB 8GB
Avexir Technologies Corporation DDR4-3000 CL15 4GB 4GB
Kingston 99U5474-010.A00LF 2GB
Corsair CM4X16GC3200C16K2 16GB
Kingston 9905403-444.A00LF 4GB
Kingston MSI24D4U7D8MD-16 16GB
Report a bug
×
Bug description
Source link