RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Compare
A-DATA Technology DQVE1908 512MB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
10
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Report a bug
Below the latency in the PassMark tests, ns
35
66
Around -89% lower latency
Faster write speed, GB/s
7.0
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
35
Read speed, GB/s
2,775.5
10.0
Write speed, GB/s
1,557.9
7.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
2068
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM comparisons
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
A-DATA Technology DQVE1908 512MB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Elpida EBJ21UE8BDF0-DJ-F 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-2800C15-16GRKD 16GB
Kingston 99U5428-018.A00LF 8GB
G Skill Intl F4-2400C15-16GFT 16GB
Samsung M3 78T2863EHS-CF7 1GB
G Skill Intl F4-3200C15-16GTZKY 16GB
Corsair CMSX4GX3M1A1600C9 4GB
SK Hynix HMA82GR7MFR8N-UH 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C14-8GFX 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Samsung M393A2G40DBD-CP1???? 16GB
SK Hynix HYMP125U64CP8-S6 2GB
G Skill Intl F4-3000C15-4GTZB 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
OCMEMORY OCM3200CL16D-16GBN 8GB
Mushkin 991988 (996988) 4GB
Transcend Information AQD-SD4U8GE21-SG 8GB
Kingston KVR800D2N6/2G 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Gold Key Technology Co Ltd NMUD480E85-2666E 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F4-2133C15-16GFX 16GB
Report a bug
×
Bug description
Source link