RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Compare
A-DATA Technology DQVE1908 512MB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Below the latency in the PassMark tests, ns
66
72
Around 8% lower latency
Faster reading speed, GB/s
2
15.3
Average value in the tests
Reasons to consider
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Report a bug
Faster write speed, GB/s
8.0
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
72
Read speed, GB/s
2,775.5
15.3
Write speed, GB/s
1,557.9
8.0
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
1593
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM comparisons
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F2-8500CL5-2GBPI 2GB
Neo Forza NMUD416E82-3600 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Micron Technology 8ATF1G64HZ-2G6H1 8GB
Kingston ACR512X64D3S13C9G 4GB
Samsung M391A2K43BB1-CTD 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Smart Modular SMS4TDC8C1K0446FCG 8GB
Nanya Technology M2F4G64CB8HG5N-CG 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
Corsair CMK4GX4M1A2400C16 4GB
Corsair CMK16GX4M1B3000C15 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMW32GX4M2Z3200C16 16GB
Samsung M471B1G73QH0-YK0 8GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Corsair CMX4GX3M2A1600C9 2GB
Kingston HP32D4U8S8HC-8X 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Kingston HP28D4S7D8HA-16X 16GB
SK Hynix HYMP112U64CP8-S6 1GB
A-DATA Technology AO2P26KC8T1-BC1S 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
Samsung M471B5773DH0-CK0 2GB
Crucial Technology CT16G4SFS832A.C8FE 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-4000C18-8GTRS 8GB
Report a bug
×
Bug description
Source link