RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology DQVE1908 512MB
V-GEN D4S4GL32A16TS 4GB
Compare
A-DATA Technology DQVE1908 512MB vs V-GEN D4S4GL32A16TS 4GB
Overall score
A-DATA Technology DQVE1908 512MB
Overall score
V-GEN D4S4GL32A16TS 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology DQVE1908 512MB
Report a bug
Faster reading speed, GB/s
2
15.9
Average value in the tests
Reasons to consider
V-GEN D4S4GL32A16TS 4GB
Report a bug
Below the latency in the PassMark tests, ns
62
66
Around -6% lower latency
Faster write speed, GB/s
7.4
1,557.9
Average value in the tests
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology DQVE1908 512MB
V-GEN D4S4GL32A16TS 4GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
66
62
Read speed, GB/s
2,775.5
15.9
Write speed, GB/s
1,557.9
7.4
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
382
1891
A-DATA Technology DQVE1908 512MB RAM comparisons
Qimonda ITC 1GB
Micron Technology 36HTS1G72FY667A1D4 8GB
V-GEN D4S4GL32A16TS 4GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4SFD8213.C16FBD1 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M3 93T5750CZA-CE6 2GB
Team Group Inc. TEAMGROUP-ED4-2400 16GB
AMD AE34G1601U1 4GB
Samsung M471A1K1KBB1-CRC 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Transcend Information JM3200HLB-16G 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Kingston KHX2400C15D4/8G 8GB
Samsung M393B5170FH0-CK0 4GB
Micron Technology 16ATF1G64AZ-2G3A2 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston MSI26D4S9S8ME-8 8GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
G Skill Intl F2-8500CL5-2GBPI 2GB
Kllisre 0000 8GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-3300C16-16GTZKW 16GB
Samsung 1600 CL10 Series 8GB
Samsung M471A1K1KBB1-CRC 8GB
Report a bug
×
Bug description
Source link