RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTZKW 8GB
Compare
A-DATA Technology VDQVE1B16 2GB vs G Skill Intl F4-3200C16-8GTZKW 8GB
Overall score
A-DATA Technology VDQVE1B16 2GB
Overall score
G Skill Intl F4-3200C16-8GTZKW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
Faster reading speed, GB/s
4
18.5
Average value in the tests
Faster write speed, GB/s
2,061.2
14.6
Average value in the tests
Reasons to consider
G Skill Intl F4-3200C16-8GTZKW 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
46
Around -59% lower latency
Higher memory bandwidth, mbps
17000
6400
Around 2.66 higher bandwidth
Specifications
Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
G Skill Intl F4-3200C16-8GTZKW 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
46
29
Read speed, GB/s
4,937.3
18.5
Write speed, GB/s
2,061.2
14.6
Memory bandwidth, mbps
6400
17000
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
5-5-5-15 / 800 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
759
3488
A-DATA Technology VDQVE1B16 2GB RAM comparisons
takeMS International AG TMS2GS264D082665EQ 2GB
Qimonda 64T64000EU3SB2 512MB
G Skill Intl F4-3200C16-8GTZKW 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLT4G4D30AETA.K8FE 4GB
Essencore Limited KD48GU88C-26N1600 8GB
G Skill Intl F4-2800C14-16GVK 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Gloway International (HK) STK4U2400D17081C 8GB
Kingston 9905403-444.A00LF 4GB
Kingston 99U5702-095.A00G 8GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 16ATF2G64HZ-2G6E1 16GB
Kingston 99U5429-007.A00LF 2GB
G Skill Intl F4-3200C14-16GTZN 16GB
Ramaxel Technology RMT3170EB68F9W1600 4GB
Samsung M378A1K43BB1-CPB 8GB
Samsung M393B2G70BH0-CH9 16GB
Kingston 9905711-002.A00G 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Apacer Technology D22.23263S.002 16GB
Team Group Inc. UD5-6400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C16-16GTRS 16GB
Team Group Inc. UD5-6400 16GB
A-DATA Technology AO1P24HC4N2-BWCS 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Avexir Technologies Corporation DDR4-2133 CL15 16GB 16G
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3200C16-8GVGB 8GB
Report a bug
×
Bug description
Source link