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A-DATA Technology VDQVE1B16 2GB
Samsung V-GeN D4S16GL32A8TS 16GB

A-DATA Technology VDQVE1B16 2GB vs Samsung V-GeN D4S16GL32A8TS 16GB

Overall score
star star star star star
A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

Overall score
star star star star star
Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Differences Specifications Comments

Differences

A-DATA Technology VDQVE1B16 2GB Reasons to consider
A-DATA Technology VDQVE1B16 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    46 left arrow 57
    Around 19% lower latency
  • Faster reading speed, GB/s
    4 left arrow 19.1
    Average value in the tests
  • Faster write speed, GB/s
    2,061.2 left arrow 10.1
    Average value in the tests
Samsung V-GeN D4S16GL32A8TS 16GB Reasons to consider
Samsung V-GeN D4S16GL32A8TS 16GB
Report a bug
  • Higher memory bandwidth, mbps
    19200 left arrow 6400
    Around 3 higher bandwidth

Specifications

Complete list of technical specifications
A-DATA Technology VDQVE1B16 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR4
  • Latency in PassMark, ns
    46 left arrow 57
  • Read speed, GB/s
    4,937.3 left arrow 19.1
  • Write speed, GB/s
    2,061.2 left arrow 10.1
  • Memory bandwidth, mbps
    6400 left arrow 19200
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    759 left arrow 2377

A-DATA Technology VDQVE1B16 2GB RAM comparisons

takeMS International AG TMS2GS264D082665EQ 2GB
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Samsung V-GeN D4S16GL32A8TS 16GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
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RAM Latency Calculator
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