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AMD R5316G1609U2K 8GB
Samsung M378A5244CB0-CVF 4GB
Compare
AMD R5316G1609U2K 8GB vs Samsung M378A5244CB0-CVF 4GB
Overall score
AMD R5316G1609U2K 8GB
Overall score
Samsung M378A5244CB0-CVF 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Reasons to consider
Samsung M378A5244CB0-CVF 4GB
Report a bug
Below the latency in the PassMark tests, ns
30
73
Around -143% lower latency
Faster reading speed, GB/s
16
6.3
Average value in the tests
Faster write speed, GB/s
12.3
5.2
Average value in the tests
Higher memory bandwidth, mbps
23400
12800
Around 1.83 higher bandwidth
Specifications
Complete list of technical specifications
AMD R5316G1609U2K 8GB
Samsung M378A5244CB0-CVF 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
73
30
Read speed, GB/s
6.3
16.0
Write speed, GB/s
5.2
12.3
Memory bandwidth, mbps
12800
23400
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-23400, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
Timings / Clock speed
9-9-9-24 / 1600 MHz
19-19-19, 20-20-20, 21-21-21, 22-22-22 / 2933 MHz
Ranking PassMark (The more the better)
1309
2709
AMD R5316G1609U2K 8GB RAM comparisons
Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB
Samsung M378A5244CB0-CVF 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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