RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
AMD R5316G1609U2K 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Compare
AMD R5316G1609U2K 8GB vs Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Overall score
AMD R5316G1609U2K 8GB
Overall score
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
AMD R5316G1609U2K 8GB
Report a bug
Below the latency in the PassMark tests, ns
73
75
Around 3% lower latency
Reasons to consider
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Report a bug
Faster reading speed, GB/s
14.9
6.3
Average value in the tests
Faster write speed, GB/s
7.1
5.2
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
AMD R5316G1609U2K 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
73
75
Read speed, GB/s
6.3
14.9
Write speed, GB/s
5.2
7.1
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1309
1763
AMD R5316G1609U2K 8GB RAM comparisons
Transcend Information TS1GLK64V3H 8GB
Ramos Technology RMB4GB584CA3-13HC 4GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
AMD R5316G1609U2K 8GB
Shenzhen Xingmem Technology Corp S949B2UUH-ITR 8GB
Samsung M378B5673EH1-CF8 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3600C16-32GVK 32GB
Kingston 9905458-017.A01LF 4GB
Corsair CMD16GX4M4B3400C16 4GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT4G4SFS8213.C8FBD2 4GB
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMWX8GF2933Z19W8 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393A1K43BB0-CRC 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Samsung M393A1K43BB1-CTD 8GB
Samsung M378A1K43EB2-CWE 8GB
Corsair CMSX64GX4M4A2400C16 16GB
SK Hynix HYMP112U64CP8-S5 1GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Team Group Inc. UD5-6400 16GB
Corsair CM4X4GF2133C13K4 4GB
Samsung M391B5673EH1-CH9 2GB
Kingston 9905734-003.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4000C19-4GTZ 4GB
Report a bug
×
Bug description
Source link