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AMD R5S38G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

AMD R5S38G1601U2S 8GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Overall score
star star star star star
AMD R5S38G1601U2S 8GB

AMD R5S38G1601U2S 8GB

Overall score
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Differences Specifications Comments

Differences

AMD R5S38G1601U2S 8GB Reasons to consider
AMD R5S38G1601U2S 8GB
Report a bug
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    31 left arrow 37
    Around -19% lower latency
  • Faster reading speed, GB/s
    20.5 left arrow 15.4
    Average value in the tests
  • Faster write speed, GB/s
    15.5 left arrow 9.2
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
AMD R5S38G1601U2S 8GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 31
  • Read speed, GB/s
    15.4 left arrow 20.5
  • Write speed, GB/s
    9.2 left arrow 15.5
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2581 left arrow 3649

AMD R5S38G1601U2S 8GB RAM comparisons

Kingston KHX1866C9D3/8GX 8GB
AMD R538G1601U2S 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
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