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ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA451U7MFR8N-TF 4GB

ASint Technology SSA302G08-EGN1C 4GB vs SK Hynix HMA451U7MFR8N-TF 4GB

Overall score
star star star star star
ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

Overall score
star star star star star
SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

Differences Specifications Comments

Differences

ASint Technology SSA302G08-EGN1C 4GB Reasons to consider
ASint Technology SSA302G08-EGN1C 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    26 left arrow 32
    Around 19% lower latency
  • Faster reading speed, GB/s
    12.6 left arrow 11.1
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 9.2
    Average value in the tests
SK Hynix HMA451U7MFR8N-TF 4GB Reasons to consider
SK Hynix HMA451U7MFR8N-TF 4GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
ASint Technology SSA302G08-EGN1C 4GB
SK Hynix HMA451U7MFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    26 left arrow 32
  • Read speed, GB/s
    12.6 left arrow 11.1
  • Write speed, GB/s
    9.5 left arrow 9.2
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2174 left arrow 2449

ASint Technology SSA302G08-EGN1C 4GB RAM comparisons

Samsung M471B5273CH0-CH9 4GB
Ramaxel Technology RMT3160ED58E9W1600 4GB

SK Hynix HMA451U7MFR8N-TF 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
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