RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CM2X1024-8500C5D 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Compare
Corsair CM2X1024-8500C5D 1GB vs Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Overall score
Corsair CM2X1024-8500C5D 1GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CM2X1024-8500C5D 1GB
Report a bug
Faster reading speed, GB/s
4
20.4
Average value in the tests
Faster write speed, GB/s
2,034.7
17.2
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Report a bug
Below the latency in the PassMark tests, ns
18
48
Around -167% lower latency
Higher memory bandwidth, mbps
19200
6400
Around 3 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CM2X1024-8500C5D 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
48
18
Read speed, GB/s
4,295.1
20.4
Write speed, GB/s
2,034.7
17.2
Memory bandwidth, mbps
6400
19200
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
650
3814
Corsair CM2X1024-8500C5D 1GB RAM comparisons
Kingston KHX8500D2K2/2GN 1GB
Corsair CM2X2048-8500C5 2GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905744-011.A00G 32GB
Samsung M393B1G70BH0-YK0 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Kingston KVR16N11/8-SP 8GB
Samsung M386A4K40BB0-CRC 32GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
SK Hynix GKE160UD102408-2400 16GB
Corsair CM2X1024-8500C5D 1GB
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16G
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M393A5143DB0-CRC 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Patriot Memory (PDP Systems) 4400 C19 Series 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMK16GX4M2Z2666C16 8GB
Corsair CM2X1024-6400C4 1GB
Corsair CMK64GX4M4D3600C18 16GB
Kingston KHX1600C10D3/8G 8GB
Kllisre KHX1866C10D3/8G 8GB
Samsung M378T5663QZ3-CF7 2GB
G Skill Intl F4-4000C18-16GTRS 16GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-2666C15-8GVK 8GB
Samsung 1600 CL10 Series 8GB
Samsung M391A1K43BB1-CRC 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMR16GX4M2D3200C16 8GB
Report a bug
×
Bug description
Source link