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Corsair CM3X8GA2400C11Y2R 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Compare
Corsair CM3X8GA2400C11Y2R 8GB vs Samsung V-GeN D4S16GL26A8TL6 16GB
Overall score
Corsair CM3X8GA2400C11Y2R 8GB
Overall score
Samsung V-GeN D4S16GL26A8TL6 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CM3X8GA2400C11Y2R 8GB
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Below the latency in the PassMark tests, ns
20
32
Around 38% lower latency
Faster reading speed, GB/s
19.1
16
Average value in the tests
Reasons to consider
Samsung V-GeN D4S16GL26A8TL6 16GB
Report a bug
Faster write speed, GB/s
13.4
13.1
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CM3X8GA2400C11Y2R 8GB
Samsung V-GeN D4S16GL26A8TL6 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
20
32
Read speed, GB/s
19.1
16.0
Write speed, GB/s
13.1
13.4
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3252
1897
Corsair CM3X8GA2400C11Y2R 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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