RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CML16GX3M2A1600C10 8GB
Samsung M378A4G43MB1-CTD 32GB
Compare
Corsair CML16GX3M2A1600C10 8GB vs Samsung M378A4G43MB1-CTD 32GB
Overall score
Corsair CML16GX3M2A1600C10 8GB
Overall score
Samsung M378A4G43MB1-CTD 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CML16GX3M2A1600C10 8GB
Report a bug
Reasons to consider
Samsung M378A4G43MB1-CTD 32GB
Report a bug
Below the latency in the PassMark tests, ns
38
41
Around -8% lower latency
Faster reading speed, GB/s
15.4
13.9
Average value in the tests
Faster write speed, GB/s
12.6
8.5
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CML16GX3M2A1600C10 8GB
Samsung M378A4G43MB1-CTD 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
41
38
Read speed, GB/s
13.9
15.4
Write speed, GB/s
8.5
12.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2385
3147
Corsair CML16GX3M2A1600C10 8GB RAM comparisons
Corsair CMZ16GX3M2A1600C9 8GB
Corsair CM4X8GE2666C16K8 8GB
Samsung M378A4G43MB1-CTD 32GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
A-DATA Technology VDQVE1B16 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Corsair CML16GX3M2A1600C10 8GB
Samsung M378A4G43MB1-CTD 32GB
AMD AE34G2139U2 4GB
Micron Technology 8ATF1G64AZ-2G1B1 8GB
Corsair CMD16GX3M2A1866C9 8GB
Corsair CMD32GX4M4C3200C16 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB
Samsung M378T5663QZ3-CF7 2GB
Patriot Memory (PDP Systems) 3600 C17 Series 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
V-Color Technology Inc. TL48G30S816KRGB 8GB
Kingston 9905403-444.A00LF 4GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
SK Hynix HYMP112S64CP6-S6 1GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D240FSE.16FAR 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Kingston KHX318C10FR/8G 8GB
Samsung M471A1G44BB0-CWE 8GB
PNY Electronics PNY 2GB
Apacer Technology GD2.1527CS.001 8GB
Samsung M3 78T3354BZ0-CCC 256MB
SK Hynix HMA81GU6AFR8N-UH 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-2666C15-8GVK 8GB
Report a bug
×
Bug description
Source link