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Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 16G3200CL22 16GB

Corsair CMSX4GX3M1A1600C9 4GB vs Micron Technology 16G3200CL22 16GB

Overall score
star star star star star
Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Overall score
star star star star star
Micron Technology 16G3200CL22 16GB

Micron Technology 16G3200CL22 16GB

Differences Specifications Comments

Differences

Corsair CMSX4GX3M1A1600C9 4GB Reasons to consider
Corsair CMSX4GX3M1A1600C9 4GB
Report a bug
  • Faster write speed, GB/s
    9.1 left arrow 7.3
    Average value in the tests
Micron Technology 16G3200CL22 16GB Reasons to consider
Micron Technology 16G3200CL22 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    28 left arrow 38
    Around -36% lower latency
  • Faster reading speed, GB/s
    14 left arrow 12.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 16G3200CL22 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 28
  • Read speed, GB/s
    12.8 left arrow 14.0
  • Write speed, GB/s
    9.1 left arrow 7.3
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2099 left arrow 2663

Corsair CMSX4GX3M1A1600C9 4GB RAM comparisons

Nanya Technology NT4GC64B8HG0NS-CG 4GB
Samsung M471B5273DH0-CH9 4GB

Micron Technology 16G3200CL22 16GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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