RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Corsair CMY8GX3M2A2666C10 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
Report a bug
Below the latency in the PassMark tests, ns
17
23
Around 26% lower latency
Faster reading speed, GB/s
22.8
17.2
Average value in the tests
Faster write speed, GB/s
15.4
13.0
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
23
Read speed, GB/s
22.8
17.2
Write speed, GB/s
15.4
13.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3391
3004
Corsair CMY8GX3M2A2666C10 4GB RAM comparisons
Micron Technology 4ATF1G64AZ-3G2B1 8GB
Crucial Technology CT8G48C40U5.M4A1 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A2K43BB1-CRC 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingmax Semiconductor GSLG42F-18---------- 8GB
A-DATA Technology ADOVE1A0834E 1GB
Samsung M471A1G43DB0-0-B 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Patriot Memory (PDP Systems) PSD44G266682 4GB
SpecTek Incorporated ?????????????????? 2GB
G Skill Intl F4-3000C16-8GTZN 8GB
SK Hynix HMT325U6CFR8C-PB 2GB
Transcend Information TS512MSH64V1H 4GB
A-DATA Technology DOVF1B163G2G 2GB
Kingston 99U5702-095.A00G 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4000C18-16GVK 16GB
SK Hynix DDR2 800 2G 2GB
Kingston LV32D4U2S8HD-8X 8GB
AMD R538G1601U2S-UO 8GB
Patriot Memory (PDP Systems) PSD32G16002 2GB
A-DATA Technology AD73I1B1672EG 2GB
A-DATA Technology AE4S240038G17-BHYA 8GB
G Skill Intl F3-1333C9-4GIS 4GB
AMD R744G2133U1S 4GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4266C19-4GTZ 4GB
SK Hynix HYMP125U64CP8-S6 2GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Report a bug
×
Bug description
Source link