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Corsair CMY8GX3M2A2666C10 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Compare
Corsair CMY8GX3M2A2666C10 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Overall score
Corsair CMY8GX3M2A2666C10 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Corsair CMY8GX3M2A2666C10 4GB
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Below the latency in the PassMark tests, ns
17
23
Around 26% lower latency
Faster reading speed, GB/s
22.8
17.2
Average value in the tests
Faster write speed, GB/s
15.4
13.0
Average value in the tests
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Corsair CMY8GX3M2A2666C10 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2400E 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
17
23
Read speed, GB/s
22.8
17.2
Write speed, GB/s
15.4
13.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 9
PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3391
3004
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
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