RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-2800C16-4GRK 4GB
Compare
Crucial Technology BLE4G3D1608DE1TX0. 4GB vs G Skill Intl F4-2800C16-4GRK 4GB
Overall score
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Overall score
G Skill Intl F4-2800C16-4GRK 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Report a bug
Below the latency in the PassMark tests, ns
34
38
Around 11% lower latency
Faster reading speed, GB/s
16.2
14.4
Average value in the tests
Reasons to consider
G Skill Intl F4-2800C16-4GRK 4GB
Report a bug
Faster write speed, GB/s
11.5
9.7
Average value in the tests
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology BLE4G3D1608DE1TX0. 4GB
G Skill Intl F4-2800C16-4GRK 4GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
38
Read speed, GB/s
16.2
14.4
Write speed, GB/s
9.7
11.5
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2636
2856
Crucial Technology BLE4G3D1608DE1TX0. 4GB RAM comparisons
Kingston HX316C10F/4 4GB
Corsair CM4X4GF2666Z16K4 4GB
G Skill Intl F4-2800C16-4GRK 4GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73QH0-YK0 8GB
A-DATA Technology DDR4 3000 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-4133C19-8GTZKW 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3466C16-8GVR 8GB
takeMS International AG TMS2GB264D083805EV 2GB
SK Hynix HMA451U7MFR8N-TF 4GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
GIGA - BYTE Technology Co Ltd GR26C16S8K1HU408 8GB
Samsung M393B1K70CH0-CH9 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2400C1XMP 8GB
Corsair CM2X1024-6400C4 1GB
Micron Technology 8ATF1G64HZ-2G3E2 8GB
Kingston KP223C-ELD 2GB
Essencore Limited IM4AGU88N24-FFFHMB 16GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK16GX4M2C3200C16 8GB
Kingston ACR512X64D3S13C9G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451S6AFR8N
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Ramaxel Technology RMSA3230KB78HAF2133 8GB
Apacer Technology 78.01G86.9H50C 1GB
Essencore Limited KD48GS88A-26N1600 8GB
Samsung M471A1G44AB0-CWE 8GB
Kingston HX424C15FB/16 16GB
Report a bug
×
Bug description
Source link