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Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Crucial Technology CT25664BA160B.C16F 2GB vs Micron Technology 18ASF2G72AZ-2G1A1 16GB

Overall score
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Overall score
star star star star star
Micron Technology 18ASF2G72AZ-2G1A1 16GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB

Differences Specifications Comments

Differences

Crucial Technology CT25664BA160B.C16F 2GB Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 31
    Around 6% lower latency
  • Faster reading speed, GB/s
    14.3 left arrow 11.7
    Average value in the tests
  • Faster write speed, GB/s
    10.1 left arrow 7.7
    Average value in the tests
Micron Technology 18ASF2G72AZ-2G1A1 16GB Reasons to consider
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 31
  • Read speed, GB/s
    14.3 left arrow 11.7
  • Write speed, GB/s
    10.1 left arrow 7.7
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2227 left arrow 1997

Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Micron Technology 18ASF2G72AZ-2G1A1 16GB RAM comparisons

Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
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