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Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB

Crucial Technology CT25664BA160B.C16F 2GB vs Micron Technology 4ATF51264HZ-2G3B1 4GB

Overall score
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Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G3B1 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB

Differences Specifications Comments

Differences

Crucial Technology CT25664BA160B.C16F 2GB Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 35
    Around 17% lower latency
Micron Technology 4ATF51264HZ-2G3B1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G3B1 4GB
Report a bug
  • Faster reading speed, GB/s
    14.8 left arrow 14.3
    Average value in the tests
  • Faster write speed, GB/s
    11.2 left arrow 10.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 35
  • Read speed, GB/s
    14.3 left arrow 14.8
  • Write speed, GB/s
    10.1 left arrow 11.2
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2227 left arrow 2336

Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Micron Technology 4ATF51264HZ-2G3B1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Latest comparisons

Crucial Technology CT25664BA160B.C16F 2GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Micron Technology 4ATF51264HZ-2G3B1 4GB
Memory RAM
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Kingston 9965525-155.A00LF 8GB
Samsung M471A5143DB0-CPB 4GB
Samsung M471A5143DB0-CPB 4GB
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AMD R5S38G1601U2S 8GB
Kingston 9905701-017.A00G 16GB
Kingston 9905701-017.A00G 16GB
Memory RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
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Samsung 1600 CL10 Series 8GB
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Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
Memory RAM
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C
AMD R334G1339U2S 4GB
AMD R334G1339U2S 4GB
Memory RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Corsair CMWS8GL3200K16W4E 8GB
Memory RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Crucial Technology BLS4G4D240FSC.8FBD 4GB
Memory RAM
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Kingston 2GB-DDR2 800Mhz 2GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
Memory RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
G Skill Intl F4-3200C14-16GTZKO 16GB
G Skill Intl F4-3200C14-16GTZKO 16GB
Memory RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Micron Technology 16ATF4G64HZ-3G2E1 32GB
Memory RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Corsair CMK16GX4M1A2666C16 16GB
Corsair CMK16GX4M1A2666C16 16GB
Memory RAM
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Kingston 99U5471-052.A00LF 8GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Memory RAM