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Crucial Technology CT25664BA160B.C16F 2GB
Samsung V-GeN D4S16GL32A8TS 16GB

Crucial Technology CT25664BA160B.C16F 2GB vs Samsung V-GeN D4S16GL32A8TS 16GB

Overall score
star star star star star
Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Overall score
star star star star star
Samsung V-GeN D4S16GL32A8TS 16GB

Samsung V-GeN D4S16GL32A8TS 16GB

Differences Specifications Comments

Differences

Crucial Technology CT25664BA160B.C16F 2GB Reasons to consider
Crucial Technology CT25664BA160B.C16F 2GB
Report a bug
  • Below the latency in the PassMark tests, ns
    29 left arrow 57
    Around 49% lower latency
Samsung V-GeN D4S16GL32A8TS 16GB Reasons to consider
Samsung V-GeN D4S16GL32A8TS 16GB
Report a bug
  • Faster reading speed, GB/s
    19.1 left arrow 14.3
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 12800
    Around 1.5 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT25664BA160B.C16F 2GB
Samsung V-GeN D4S16GL32A8TS 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    29 left arrow 57
  • Read speed, GB/s
    14.3 left arrow 19.1
  • Write speed, GB/s
    10.1 left arrow 10.1
  • Memory bandwidth, mbps
    12800 left arrow 19200
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • Ranking PassMark (The more the better)
    2227 left arrow 2377

Crucial Technology CT25664BA160B.C16F 2GB RAM comparisons

Samsung M378B5773DH0-CH9 2GB
Heoriady M378B5273DH0-CK0 4GB

Samsung V-GeN D4S16GL32A8TS 16GB RAM comparisons

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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