RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BA1339.C16F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Compare
Crucial Technology CT51264BA1339.C16F 4GB vs Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Overall score
Crucial Technology CT51264BA1339.C16F 4GB
Overall score
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BA1339.C16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
27
32
Around 16% lower latency
Reasons to consider
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Report a bug
Faster reading speed, GB/s
19.4
13.9
Average value in the tests
Faster write speed, GB/s
16.3
8.4
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BA1339.C16F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
27
32
Read speed, GB/s
13.9
19.4
Write speed, GB/s
8.4
16.3
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2251
3726
Crucial Technology CT51264BA1339.C16F 4GB RAM comparisons
Crucial Technology CT51264BA1339J.C8F 4GB
Crucial Technology CT51264BA1339J.M8F 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2133C9-4GAB 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Samsung M378B5673FH0-CH9 2GB
G Skill Intl F4-4266C19-8GTZA 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited CL18-20-20 D4-3200
Crucial Technology CT51264BD1339.M16F 4GB
Chun Well Technology Holding Limited ND4U0840180BRPDE 8
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Panram International Corporation PUD43000C164G2NJK 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Kingston KCRXJ6-MIE 16GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Shanghai Kuxin Microelectronics Ltd NMUD416E82-3200 16G
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Xinshirui (Shenzhen) Electronics Co V01D4L84GB528528266
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Thermaltake Technology Co Ltd R017D408GX2-4400C19A 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Shanghai Kuxin Microelectronics Ltd NMSO416E82-2400E 16
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-4133C19-8GTZRF 8GB
‹
›
Report a bug
×
Bug description
Source link