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Crucial Technology CT51264BA160B.C16F 4GB
Samsung M378A1G44AB0-CWE 8GB

Crucial Technology CT51264BA160B.C16F 4GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score
star star star star star
Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Overall score
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

Crucial Technology CT51264BA160B.C16F 4GB Reasons to consider
Crucial Technology CT51264BA160B.C16F 4GB
Report a bug
Samsung M378A1G44AB0-CWE 8GB Reasons to consider
Samsung M378A1G44AB0-CWE 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 41
    Around -8% lower latency
  • Faster reading speed, GB/s
    16.5 left arrow 14.3
    Average value in the tests
  • Faster write speed, GB/s
    10.9 left arrow 9.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 12800
    Around 2 higher bandwidth

Specifications

Complete list of technical specifications
Crucial Technology CT51264BA160B.C16F 4GB
Samsung M378A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    41 left arrow 38
  • Read speed, GB/s
    14.3 left arrow 16.5
  • Write speed, GB/s
    9.4 left arrow 10.9
  • Memory bandwidth, mbps
    12800 left arrow 25600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2142 left arrow 2829

Crucial Technology CT51264BA160B.C16F 4GB RAM comparisons

SK Hynix HMT351U6CFR8C-PB 4GB
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Samsung M378A1G44AB0-CWE 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
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