RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Below the latency in the PassMark tests, ns
25
27
Around 7% lower latency
Faster reading speed, GB/s
12.1
11.4
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Report a bug
Faster write speed, GB/s
11.8
8.6
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
27
Read speed, GB/s
12.1
11.4
Write speed, GB/s
8.6
11.8
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2045
2062
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
Swissbit SLN04G64E1BQ2SA-DC 4GB
Kingston 9905471-030.A00LF 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB RAM comparisons
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Crucial Technology CT51264BD1339.M16F 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
Kingmax Semiconductor FLFE85F-C8KM9 2GB
G Skill Intl F4-3600C19-8GTZRB 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston 9905625-036.A00G 16GB
Qimonda 72T128420EFA3SB2 1GB
Apacer Technology 78.CAGP7.4020B 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMD128GX4M8B3200C16 16GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Crucial Technology CT102464BA160B.M16 8GB
Wilk Elektronik S.A. IRH3000D464L16S/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT4G4DFS824A.C8FE 4GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMK16GX4M1A2666C16 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLT8G4D30BET4K.C8FD 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
A-DATA Technology AO1P26KC8T1-BXFSHC 8GB
Kingston 9905471-006.A01LF 4GB
SK Hynix HMA84GR7MFR4N-TF 32GB
Kingston KHX1866C10D3/8GX 8GB
G Skill Intl F4-2133C15-8GIS 8GB
Report a bug
×
Bug description
Source link