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Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Compare
Crucial Technology CT51264BD1339.M16F 4GB vs Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Overall score
Crucial Technology CT51264BD1339.M16F 4GB
Overall score
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Crucial Technology CT51264BD1339.M16F 4GB
Report a bug
Reasons to consider
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Report a bug
Below the latency in the PassMark tests, ns
22
25
Around -14% lower latency
Faster reading speed, GB/s
17.7
12.1
Average value in the tests
Faster write speed, GB/s
12.7
8.6
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
25
22
Read speed, GB/s
12.1
17.7
Write speed, GB/s
8.6
12.7
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2045
3075
Crucial Technology CT51264BD1339.M16F 4GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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