RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Compare
Elpida EBJ10UE8BAFA-AE-E 1GB vs G Skill Intl F4-4000C19-8GTZSW 8GB
Overall score
Elpida EBJ10UE8BAFA-AE-E 1GB
Overall score
G Skill Intl F4-4000C19-8GTZSW 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Elpida EBJ10UE8BAFA-AE-E 1GB
Report a bug
Reasons to consider
G Skill Intl F4-4000C19-8GTZSW 8GB
Report a bug
Below the latency in the PassMark tests, ns
26
65
Around -150% lower latency
Faster reading speed, GB/s
19.4
6.1
Average value in the tests
Faster write speed, GB/s
15.5
4.2
Average value in the tests
Higher memory bandwidth, mbps
17000
8500
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Elpida EBJ10UE8BAFA-AE-E 1GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
65
26
Read speed, GB/s
6.1
19.4
Write speed, GB/s
4.2
15.5
Memory bandwidth, mbps
8500
17000
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1066 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
985
3515
Elpida EBJ10UE8BAFA-AE-E 1GB RAM comparisons
Corsair CM3X1G1600C9 1GB
Corsair CM4X8GF2666C16K8 8GB
G Skill Intl F4-4000C19-8GTZSW 8GB RAM comparisons
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
SK Hynix HMT451U7BFR8C-RD 4GB
Smart Modular SMU4WEC8C1K0464FCG 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Samsung M393A5143DB0-CPB 4GB
Samsung M393B1K70CH0-YH9 8GB
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB
Kingston KF560C40-16 16GB
Micron Technology 8ATF1G64HZ-2G1A1 8GB
Samsung M393B2G70BH0-CK0 16GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
Samsung M471B5173EB0-YK0 4GB
Samsung M471A2K43EB1-CWE 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905624-004.A00G 4GB
Kingston KHX1600C9S3L/4G 4GB
Corsair CMK16GX4M2K4400C19 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C16-16GTRS 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingmax Semiconductor GLLH22F-18KCGA------ 16GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMSX16GX4M2A3200C22 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston KF3600C18D4/32GX 32GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4400C19-32GTRS 32GB
Report a bug
×
Bug description
Source link