RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Compare
G Skill Intl F3-10600CL9-2GBNT 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Overall score
G Skill Intl F3-10600CL9-2GBNT 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-10600CL9-2GBNT 2GB
Report a bug
Faster reading speed, GB/s
13.2
12.7
Average value in the tests
Faster write speed, GB/s
8.4
6.3
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
26
Around -8% lower latency
Higher memory bandwidth, mbps
17000
10600
Around 1.6 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
26
24
Read speed, GB/s
13.2
12.7
Write speed, GB/s
8.4
6.3
Memory bandwidth, mbps
10600
17000
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2070
2256
G Skill Intl F3-10600CL9-2GBNT 2GB RAM comparisons
A-DATA Technology DDR3L 1600G 4GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD102408-2133 16GB RAM comparisons
Samsung M323R2GA3BB0-CQKOD 16GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
King Tiger Technology TMKG8G3000C17(XMP) 8GB
Samsung M378A1G43DB0-CPB 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
G Skill Intl F3-10600CL9-2GBNT 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
G Skill Intl F3-14900CL8-4GBXM 4GB
Gloway International Co. Ltd. YCT4S2666D19081C 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF2G64HZ-2G6J1 16GB
Crucial Technology CT102464BA160B.M16 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology DQKD1A08 1GB
AMD R744G2400U1S 4GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3200C14-8GTZKW 8GB
Kingston KVR800D2N6/2G 2GB
Corsair CMK16GX4M2A2400C14 8GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2800C18-16GRS 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology CT16G4DFRA32A.M16FJ1 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology BL8G26C16S4B.8FD 8GB
Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-16GTZKY 16GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CB16GS2400.C16J 16GB
Report a bug
×
Bug description
Source link