RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Compare
G Skill Intl F3-12800CL7-4GBXM 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Overall score
G Skill Intl F3-12800CL7-4GBXM 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-12800CL7-4GBXM 4GB
Report a bug
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Report a bug
Below the latency in the PassMark tests, ns
24
36
Around -50% lower latency
Faster reading speed, GB/s
16
14.8
Average value in the tests
Faster write speed, GB/s
12.5
8.7
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
36
24
Read speed, GB/s
14.8
16.0
Write speed, GB/s
8.7
12.5
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
2481
2925
G Skill Intl F3-12800CL7-4GBXM 4GB RAM comparisons
Corsair CMY8GX3M2A2666C10 4GB
G Skill Intl F3-19200CL9-4GBZMD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM comparisons
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 9ASF1G72PZ-2G6D1 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3600C16-16GTZR 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMU16GX4M2A2666C16 8GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK64GX4M2C3200C16 32GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT16G4SFD8213.C16FBD 16GB
Corsair CMX4GX3M2A1600C9 2GB
SK Hynix HMA81GS6MFR8N-UH 8GB
Kingston 9965662-016.A00G 16GB
Kingston 9905713-019.A00G 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3333C16-16GTZ 16GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3333C16-8GTZB 8GB
AMD R5316G1609U2K 8GB
Kingston KCRXJ6-MIE 16GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3800C14-8GTZN 8GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology BLS8G4S240FSD.M16FAD 8GB
Report a bug
×
Bug description
Source link