G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

G Skill Intl F3-12800CL7-4GBXM 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Overall score
star star star star star
G Skill Intl F3-12800CL7-4GBXM 4GB

G Skill Intl F3-12800CL7-4GBXM 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB

Differences

  • Faster reading speed, GB/s
    14.8 left arrow 9.1
    Average value in the tests
  • Faster write speed, GB/s
    8.7 left arrow 7.9
    Average value in the tests
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-12800CL7-4GBXM 4GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 36
  • Read speed, GB/s
    14.8 left arrow 9.1
  • Write speed, GB/s
    8.7 left arrow 7.9
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 13 15 18 21 22
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2481 left arrow 2090
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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