RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A4G43AB1-CWE 32GB
Compare
G Skill Intl F3-1333C9-4GIS 4GB vs Samsung M471A4G43AB1-CWE 32GB
Overall score
G Skill Intl F3-1333C9-4GIS 4GB
Overall score
Samsung M471A4G43AB1-CWE 32GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-1333C9-4GIS 4GB
Report a bug
Below the latency in the PassMark tests, ns
28
45
Around 38% lower latency
Reasons to consider
Samsung M471A4G43AB1-CWE 32GB
Report a bug
Faster reading speed, GB/s
15.6
12.4
Average value in the tests
Faster write speed, GB/s
12.8
7.5
Average value in the tests
Higher memory bandwidth, mbps
25600
10600
Around 2.42 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A4G43AB1-CWE 32GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
45
Read speed, GB/s
12.4
15.6
Write speed, GB/s
7.5
12.8
Memory bandwidth, mbps
10600
25600
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
Timings / Clock speed
7-7-7-20 / 1333 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2014
2925
G Skill Intl F3-1333C9-4GIS 4GB RAM comparisons
Wilk Elektronik S.A. GR1333D364L9/8G 8GB
Corsair CMW16GX4M2D3000C16 8GB
Samsung M471A4G43AB1-CWE 32GB RAM comparisons
Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-1333C9-4GIS 4GB
Samsung M471A4G43AB1-CWE 32GB
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F4-2400C15-8GVB 8GB
Corsair CML8GX3M2A1866C9 4GB
G Skill Intl F4-3600C19-16GVRB 16GB
Micron Technology 16JTF25664AZ-1G4F1 2GB
Micron Technology 16JTF25664AZ-1G4G1 2GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Corsair CMSO4GX4M1A2133C15 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMH16GX4M2Z3200C16 8GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4DFS8266.C8FE 8GB
AMD R538G1601U2S 8GB
SK Hynix HMA851S6CJR6N-XN 4GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Panram International Corporation PUD43000C158G2NJK 8GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Unifosa Corporation HU564404EP0200 4GB
Kingston XRGM6C-MIE 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Crucial Technology CB4GU2400.M8E 4GB
Apacer Technology 78.01G86.9H50C 1GB
Kingston KM0VW4-MID 8GB
Samsung M3 78T2863EHS-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Report a bug
×
Bug description
Source link