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G Skill Intl F3-1600C11-4GNS 4GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB

G Skill Intl F3-1600C11-4GNS 4GB vs Micron Technology 72ASS4G72LZ-2G1A1 32GB

Overall score
star star star star star
G Skill Intl F3-1600C11-4GNS 4GB

G Skill Intl F3-1600C11-4GNS 4GB

Overall score
star star star star star
Micron Technology 72ASS4G72LZ-2G1A1 32GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB

Differences Specifications Comments

Differences

G Skill Intl F3-1600C11-4GNS 4GB Reasons to consider
G Skill Intl F3-1600C11-4GNS 4GB
Report a bug
  • Faster reading speed, GB/s
    14.3 left arrow 8.8
    Average value in the tests
  • Faster write speed, GB/s
    8.4 left arrow 7.7
    Average value in the tests
Micron Technology 72ASS4G72LZ-2G1A1 32GB Reasons to consider
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 12800
    Around 1.33 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-1600C11-4GNS 4GB
Micron Technology 72ASS4G72LZ-2G1A1 32GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    39 left arrow 39
  • Read speed, GB/s
    14.3 left arrow 8.8
  • Write speed, GB/s
    8.4 left arrow 7.7
  • Memory bandwidth, mbps
    12800 left arrow 17000
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2231 left arrow 2083

G Skill Intl F3-1600C11-4GNS 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT41GR7AFR8C-RD 8GB
Samsung 9905599-020.A00G 16GB

Micron Technology 72ASS4G72LZ-2G1A1 32GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
RAM Latency Calculator
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