RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2400C11-8GSR 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Compare
G Skill Intl F3-2400C11-8GSR 8GB vs V-Color Technology Inc. TN48G26S819-SB 8GB
Overall score
G Skill Intl F3-2400C11-8GSR 8GB
Overall score
V-Color Technology Inc. TN48G26S819-SB 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2400C11-8GSR 8GB
Report a bug
Reasons to consider
V-Color Technology Inc. TN48G26S819-SB 8GB
Report a bug
Below the latency in the PassMark tests, ns
25
34
Around -36% lower latency
Faster write speed, GB/s
13.6
11.3
Average value in the tests
Higher memory bandwidth, mbps
21300
10600
Around 2.01 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2400C11-8GSR 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
34
25
Read speed, GB/s
16.8
16.8
Write speed, GB/s
11.3
13.6
Memory bandwidth, mbps
10600
21300
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 19 20
Timings / Clock speed
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2968
2889
G Skill Intl F3-2400C11-8GSR 8GB RAM comparisons
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-2400C11-8GXM 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F3-2400C11-8GSR 8GB
V-Color Technology Inc. TN48G26S819-SB 8GB
G Skill Intl F3-1333C9-4GIS 4GB
SK Hynix HMAA4GS6AJR8N-XN 32GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Crucial Technology CT8G4SFD8213.C16FADP 8GB
Ramaxel Technology RMSA3270ME86H9F-2666 4GB
Samsung M471A2K43CB1-CTD 16GB
Samsung M471B5173QH0-YK0 4GB
G Skill Intl F4-2666C15-16GVR 16GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) 4000 C20 Series 8GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4000C17-16GTZRB 16GB
Kingston 99U5428-063.A00LF 8GB
Kingston 9905702-006.A00G 8GB
Samsung M393B1K70CH0-YH9 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
TwinMOS 9DCTCO4E-TATP 8GB
Micron Technology 8ATF1G64HZ-2G3A1 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology CT16G4SFD824A.M16FH 16GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
Avant Technology J642GU42J7240N2 16GB
Samsung M471B5273DH0-CH9 4GB
G Skill Intl F4-3200C14-8GTZRX 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BLT8G4D30AETA.K16FD 8GB
Report a bug
×
Bug description
Source link