RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Compare
G Skill Intl F3-2666C12-8GTXD 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Overall score
G Skill Intl F3-2666C12-8GTXD 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F3-2666C12-8GTXD 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
35
Around 20% lower latency
Faster reading speed, GB/s
18.2
10
Average value in the tests
Faster write speed, GB/s
11.5
7.0
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Report a bug
Higher memory bandwidth, mbps
19200
10600
Around 1.81 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F3-2666C12-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
35
Read speed, GB/s
18.2
10.0
Write speed, GB/s
11.5
7.0
Memory bandwidth, mbps
10600
19200
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
3067
2068
G Skill Intl F3-2666C12-8GTXD 8GB RAM comparisons
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F3-2666C11-8GTXD 8GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N-UH 16GB RAM comparisons
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA82GS6CJR8N-VK 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M471B1G73BH0-YH9 8GB
Kingston KHYXPX-MID 8GB
G Skill Intl F4-3600C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZB 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Crucial Technology BL16G36C16U4R.M16FE1 16GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX3300C16D4/4GX 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Samsung M378A1K43BB1-CPB 8GB
G Skill Intl F5-6400J3239G16G 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB
Kingston 9965525-018.A00LF 4GB
Micron Technology 16ATF4G64AZ-3G2B1 32GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Micron Technology M471A1K43BB1-CRC 8GB
SK Hynix HMT351U6CFR8C-H9 4GB
Corsair CMK16GX4M2D3600C16 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2D3600C16 8GB
G Skill Intl F5-5600J4040C16G 16GB
G Skill Intl F4-2666C18-4GRS 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D240FSB.16FARG 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Report a bug
×
Bug description
Source link