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G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

G Skill Intl F3-2800C12-8GTXDG 8GB vs Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Overall score
star star star star star
G Skill Intl F3-2800C12-8GTXDG 8GB

G Skill Intl F3-2800C12-8GTXDG 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB

Differences Specifications Comments

Differences

G Skill Intl F3-2800C12-8GTXDG 8GB Reasons to consider
G Skill Intl F3-2800C12-8GTXDG 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    21 left arrow 29
    Around 28% lower latency
  • Faster reading speed, GB/s
    17.4 left arrow 12.2
    Average value in the tests
  • Faster write speed, GB/s
    12.2 left arrow 9.6
    Average value in the tests
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Report a bug
  • Higher memory bandwidth, mbps
    17000 left arrow 10600
    Around 1.6 higher bandwidth

Specifications

Complete list of technical specifications
G Skill Intl F3-2800C12-8GTXDG 8GB
Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    21 left arrow 29
  • Read speed, GB/s
    17.4 left arrow 12.2
  • Write speed, GB/s
    12.2 left arrow 9.6
  • Memory bandwidth, mbps
    10600 left arrow 17000
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3130 left arrow 2443

G Skill Intl F3-2800C12-8GTXDG 8GB RAM comparisons

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Hynix Semiconductor (Hyundai Electronics) HMA451U6MFR8N-TF 4GB RAM comparisons

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RAM Latency Calculator
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