RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Compare
G Skill Intl F4-4000C14-16GTZR 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Overall score
G Skill Intl F4-4000C14-16GTZR 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F4-4000C14-16GTZR 16GB
Report a bug
Faster reading speed, GB/s
24
16.2
Average value in the tests
Faster write speed, GB/s
20.0
12.7
Average value in the tests
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Report a bug
Below the latency in the PassMark tests, ns
28
29
Around -4% lower latency
Higher memory bandwidth, mbps
19200
17000
Around 1.13 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
29
28
Read speed, GB/s
24.0
16.2
Write speed, GB/s
20.0
12.7
Memory bandwidth, mbps
17000
19200
Other
Description
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)
4156
2417
G Skill Intl F4-4000C14-16GTZR 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-UH 8GB RAM comparisons
Samsung M3 78T3354BZ0-CCC 256MB
Crucial Technology CT51264BF160BJ.M8F 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
G Skill Intl F4-4000C14-16GTZR 16GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
SK Hynix HMA451U6AFR8N-TF 4GB
ISD Technology Limited IM48GU48N21-FFFHM 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Micron Technology HMA81GU6AFR8N-UH 8GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Corsair CMK128GX4M4E3200C16 32GB
Kingston 99U5471-020.A00LF 4GB
Samsung M378A1G44AB0-CWE 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BLS16G4D240FSB.16FBD 16GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Kingston HP32D4U2S8ME-16 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Panram International Corporation PUD42400C154G4NJK 4GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3000C15-4GTZB 4GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Samsung M393B1G70BH0-YK0 8GB
Kingston KHX2400C12D4/4GX 4GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9905711-002.A00G 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology BLS8G4S240FSD.16FBD 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Corsair CM4X8GF2133C13K4 8GB
Report a bug
×
Bug description
Source link