RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
G Skill Intl F5-6000J3636F16G 16GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Compare
G Skill Intl F5-6000J3636F16G 16GB vs Micron Technology 8ATF1G64HZ-2G6E3 8GB
Overall score
G Skill Intl F5-6000J3636F16G 16GB
Overall score
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
G Skill Intl F5-6000J3636F16G 16GB
Report a bug
Below the latency in the PassMark tests, ns
22
35
Around 37% lower latency
Faster write speed, GB/s
13.4
12.3
Average value in the tests
Reasons to consider
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Report a bug
Faster reading speed, GB/s
15
14.4
Average value in the tests
Higher memory bandwidth, mbps
21300
19200
Around 1.11 higher bandwidth
Specifications
Complete list of technical specifications
G Skill Intl F5-6000J3636F16G 16GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Main characteristics
Memory type
DDR5
DDR4
Latency in PassMark, ns
22
35
Read speed, GB/s
14.4
15.0
Write speed, GB/s
13.4
12.3
Memory bandwidth, mbps
19200
21300
Other
Description
PC5-19200, 1.1V, CAS Supported: 22 28 30 32 36 40 42
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
Timings / Clock speed
no data / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
3671
2841
G Skill Intl F5-6000J3636F16G 16GB RAM comparisons
Apacer Technology 76.D105G.D090B 16GB
Kingston 9905783-025.A01G 16GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M393B5270CH0-CH9 4GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Kingston ACR256X64D3S1333C9 2GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology BL8G32C16U4W.8FE 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Kingston KF3600C17D4/8GX 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMW256GX4M8E3200C16 32GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Corsair CM4X8GE3000C15K4 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology BLS8G4D26BFSCK.8FD 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Essencore Limited KD4AGU880-32A160U 16GB
SK Hynix HYMP112U64CP8-S6 1GB
Corsair CMK16GX4M2F4400C19 8GB
Kingston KHX3200C18D4/8G 8GB
Micron Technology 36ASF2G72PZ-2G1B1 16GB
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston 9905700-072.A01G 16GB
TwinMOS 8DHE3MN8-HATP 2GB
Micron Technology 8ATF2G64AZ-3G2B1 16GB
Kingston 99U5469-045.A00LF 4GB
Samsung M471A1G44BB0-CWE 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 9905700-024.A00G 8GB
Report a bug
×
Bug description
Source link