RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A1K43BB1-CTD 8GB
Compare
Golden Empire 1GB DDR2 800 CAS=4 1GB vs Samsung M393A1K43BB1-CTD 8GB
Overall score
Golden Empire 1GB DDR2 800 CAS=4 1GB
Overall score
Samsung M393A1K43BB1-CTD 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Golden Empire 1GB DDR2 800 CAS=4 1GB
Report a bug
Below the latency in the PassMark tests, ns
49
61
Around 20% lower latency
Reasons to consider
Samsung M393A1K43BB1-CTD 8GB
Report a bug
Faster reading speed, GB/s
8.2
4
Average value in the tests
Faster write speed, GB/s
6.4
2,066.5
Average value in the tests
Higher memory bandwidth, mbps
21300
6400
Around 3.33 higher bandwidth
Specifications
Complete list of technical specifications
Golden Empire 1GB DDR2 800 CAS=4 1GB
Samsung M393A1K43BB1-CTD 8GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
49
61
Read speed, GB/s
4,577.1
8.2
Write speed, GB/s
2,066.5
6.4
Memory bandwidth, mbps
6400
21300
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
5-5-5-15 / 800 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
737
1813
Golden Empire 1GB DDR2 800 CAS=4 1GB RAM comparisons
Samsung M395T5663QZ4-CE66 1GB
Kingston TCM633-QAC 1GB
Samsung M393A1K43BB1-CTD 8GB RAM comparisons
Kingston 9905403-444.A00LF 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston ASU21D4U5S8MB-8 8GB
ASint Technology SSA302G08-EGN1C 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-2666C16-8GRB 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
Kingston KF2666C16D4/8G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston KF3200C20S4/16G 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston KHX3600C17D4/16GX 16GB
Kingston 99U5428-018.A00LF 8GB
Samsung M471A1G43DB0-0-B 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Corsair CMK16GX4M2B3333C16 8GB
Corsair CM3X8GA2400C11Y2R 8GB
G Skill Intl F4-2400C15-4GIS 4GB
Samsung 1600 CL10 Series 8GB
Essencore Limited KD48GU88C-26N190A 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Panram International Corporation PUD42400C168GVS 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Report a bug
×
Bug description
Source link