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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB vs SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Overall score
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
Report a bug
Below the latency in the PassMark tests, ns
35
59
Around 41% lower latency
Faster write speed, GB/s
7.9
7.6
Average value in the tests
Reasons to consider
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Report a bug
Faster reading speed, GB/s
17.3
9.8
Average value in the tests
Higher memory bandwidth, mbps
21300
17000
Around 1.25 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB
SanMax Technologies Inc. SMD4-U4G26SC-26V 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
35
59
Read speed, GB/s
9.8
17.3
Write speed, GB/s
7.9
7.6
Memory bandwidth, mbps
17000
21300
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2126
1954
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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calculate
Absolute Latency
0 ns
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