RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB vs Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Overall score
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Report a bug
Reasons to consider
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Report a bug
Faster reading speed, GB/s
16.7
12.1
Average value in the tests
Faster write speed, GB/s
13.5
7.8
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
29
Read speed, GB/s
12.1
16.7
Write speed, GB/s
7.8
13.5
Memory bandwidth, mbps
12800
21300
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
9-9-9-24 / 1600 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
2177
3076
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB RAM comparisons
G Skill Intl F3-12800CL9-4GBRL 4GB
Avant Technology W644GU44J2320NH 32GB
Thermaltake Technology Co Ltd R009D408GX2-4400C19A 8GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Samsung M4 70T2953EZ3-CE6 1GB
Corsair CMD64GX4M8X3800C19 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1
Kingston 9905403-447.A00LF 4GB
Essencore Limited IM4AGS88N24-FFFHA0 16GB
Micron Technology 8JSF25664HZ-1G4D1 2GB
Crucial Technology CT8G4DFS8213.C8FDR1 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
Chun Well Technology Holding Limited CL16-18-18 D4-3000
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M378B5773DH0-CH9 2GB
Corsair CMK64GX4M8X4000C19 8GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Smart Modular SF464128CKHI6DFSEG 4GB
Samsung M471B5673FH0-CH9 2GB
Micron Technology 8ATF1G64HZ-3G2E1 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Kingston 9965600-005.A00G 16GB
Samsung 1600 CL10 Series 8GB
Micron Technology 16ATF2G64AZ-2G1B1 16GB
Kingston KVR16N11/8-SP 8GB
Micron Technology 18ASF2G72AZ-2G3B1 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-4000C14-8GTZR 8GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-2400C14-4GRK 4GB
Report a bug
×
Bug description
Source link