RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB vs A-DATA Technology AO1P32NC8T1-BCSS 8GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Overall score
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Report a bug
Below the latency in the PassMark tests, ns
29
39
Around 26% lower latency
Reasons to consider
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Report a bug
Faster reading speed, GB/s
17.6
13.4
Average value in the tests
Faster write speed, GB/s
13.9
9.0
Average value in the tests
Higher memory bandwidth, mbps
25600
12800
Around 2 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
29
39
Read speed, GB/s
13.4
17.6
Write speed, GB/s
9.0
13.9
Memory bandwidth, mbps
12800
25600
Other
Description
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 22 24
Timings / Clock speed
9-9-9-24 / 1600 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
2423
3046
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB RAM comparisons
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8C-PB 4GB
Corsair CMW16GX4M2Z4000C18 8GB
A-DATA Technology AO1P32NC8T1-BCSS 8GB RAM comparisons
SpecTek Incorporated ?????????????????? 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
A-DATA Technology AO1P32NC8T1-BCSS 8GB
Samsung M378T5663QZ3-CF7 2GB
GIGA - BYTE Technology Co Ltd AR32C16S8K2SU416R 8GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLS4G4D26BFSC.8FE 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
G Skill Intl F4-2933C14-16GFX 16GB
SK Hynix DDR2 800 2G 2GB
Kingston KV0M5R-MIE 8GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston 9905598-040.A00G 16GB
A-DATA Technology AD4S3200316G22-BHYD 16GB
V-GEN D4H16GS24A8 16GB
Samsung M471B5173QH0-YK0 4GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
Samsung 1600 CL10 Series 8GB
Apacer Technology D12.2326WH.001 16GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Samsung M395T2863QZ4-CF76 1GB
Kingston 9905624-043.A00G 8GB
Kingston KVR16N11/8-SP 8GB
Kingston 9905701-020.A00G 16GB
SK Hynix HMT351U6CFR8C-H9 4GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Report a bug
×
Bug description
Source link